发明名称 THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR
摘要 A thin-film transistor and a manufacturing method therefor, an array substrate (1) comprising the thin-film transistor and a manufacturing method therefor. The manufacturing method for a thin-film transistor comprises: forming an active layer (4) and a source-drain electrode layer (5), forming a photoresist layer (6) on the source-drain electrode layer (5), and forming a pattern of the photoresist layer via a patterning process; taking the pattern of the photoresist layer as a mask to etch the source-drain electrode layer (5) so as to form a pattern of the source-drain electrode layer comprising a source electrode and a drain electrode; and after the photoresist is stripped, using the pattern of the source-drain electrode layer as a mask to etch the active layer (4) so as to form a pattern of the active layer. The manufacturing methods for a thin-film transistor and for an array substrate can prevent and reduce the pollution from organic substances in a region between a source electrode and a drain electrode of an active layer of a thin-film transistor, thereby increasing the electrical performance of the thin-film transistor.
申请公布号 WO2015096416(A1) 申请公布日期 2015.07.02
申请号 WO2014CN80236 申请日期 2014.06.18
申请人 BOE TECHNOLOGY GROUP CO., LTD.;BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. 发明人 WANG, SHOUKUN;GUO, HUIBIN;FENG, YUCHUN;LIU, XIAOWEI;GUO, ZONGJIE
分类号 H01L21/336;H01L27/12;H01L29/786 主分类号 H01L21/336
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