发明名称 |
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR |
摘要 |
A thin-film transistor and a manufacturing method therefor, an array substrate (1) comprising the thin-film transistor and a manufacturing method therefor. The manufacturing method for a thin-film transistor comprises: forming an active layer (4) and a source-drain electrode layer (5), forming a photoresist layer (6) on the source-drain electrode layer (5), and forming a pattern of the photoresist layer via a patterning process; taking the pattern of the photoresist layer as a mask to etch the source-drain electrode layer (5) so as to form a pattern of the source-drain electrode layer comprising a source electrode and a drain electrode; and after the photoresist is stripped, using the pattern of the source-drain electrode layer as a mask to etch the active layer (4) so as to form a pattern of the active layer. The manufacturing methods for a thin-film transistor and for an array substrate can prevent and reduce the pollution from organic substances in a region between a source electrode and a drain electrode of an active layer of a thin-film transistor, thereby increasing the electrical performance of the thin-film transistor. |
申请公布号 |
WO2015096416(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
WO2014CN80236 |
申请日期 |
2014.06.18 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD.;BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. |
发明人 |
WANG, SHOUKUN;GUO, HUIBIN;FENG, YUCHUN;LIU, XIAOWEI;GUO, ZONGJIE |
分类号 |
H01L21/336;H01L27/12;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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