发明名称 Method for forming one or more vias through a semiconductor substrate and forming a redistribution layer on the semiconductor substrate
摘要 Embodiments of the present invention provide an apparatus that includes a semiconductor substrate comprising a first surface having one or more integrated circuit devices formed thereon and a second surface opposite the first surface, wherein one or more vias are formed through the semiconductor substrate to couple the first surface with the second surface. The apparatus may further include a redistribution layer coupled with the second surface of the semiconductor substrate, wherein the one or more vias couple the redistribution layer with the first surface of the semiconductor substrate. Other embodiments including, for example, associated packages and methods may be described and/or claimed.
申请公布号 US9064860(B1) 申请公布日期 2015.06.23
申请号 US201414293229 申请日期 2014.06.02
申请人 Marvell International Ltd. 发明人 Liou Shiann-Ming;Wu Albert
分类号 H01L21/4763;H01L23/498;H01L23/00 主分类号 H01L21/4763
代理机构 代理人
主权项 1. A method comprising: forming an integrated circuit device on a first surface of a semiconductor substrate; forming one or more vias through the semiconductor substrate, wherein the one or more vias couple (i) the first surface of the semiconductor substrate and (ii) a second surface of the semiconductor substrate, wherein the second surface is disposed opposite to the first surface; forming a redistribution layer on the second surface of the semiconductor substrate; coupling the redistribution layer to the first surface of the semiconductor substrate through the one or more vias; and attaching, via die attach material, the second surface of the semiconductor substrate to a package substrate, wherein no bumps, posts, or solder balls are disposed between the second surface of the semiconductor substrate and the package substrate to electrically couple the redistribution layer to the package substrate.
地址 Hamilton BM