| 摘要 |
PROBLEM TO BE SOLVED: To improve the electrical characteristics of a P-type semiconductor layer.SOLUTION: A method of manufacturing a semiconductor device including an N-type semiconductor layer on a P-type semiconductor layer comprises: a dry-etching step of exposing a surface in a thickness direction of the P-type semiconductor layer by making the N-type semiconductor layer to be penetrated in a thickness direction by dry-etching; and a heating step of heating the P-type semiconductor layer in an atmosphere containing oxygen after the dry-etching step. |
