Metal-insulator-metal capacitor and method for manufacturing thereof

摘要

The present invention is related to a method for producing a stack of layers on a semiconductor substrate, the method comprising the steps of:
—� providing a substrate,
—� producing on said substrate a first conductive layer,
—� by atomic layer deposition, producing a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO 2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers,
The substrate including said sub-stack of layers is subjected to a heat treatment to thereby obtain a crystallized dielectric layer. A second conductive layer is produced before or after the heat treatment so as to obtain a metal-insulator-metal capacitor with improved characteristics as a consequence of the Ti02 layer being present in the sub-stack. Notably, in a MIM capacitor according to the invention, the k-value of the dielectric layer is between 50 and 100 and the EOT of the MIM capacitor is between 0.35nm and 0.55nm.