| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which both of an IGBT and a diode have a buffer region, and the on-state voltage of the IGBT is low.SOLUTION: A semiconductor device has: a cathode region of a diode; a first buffer region adjacent to the back surface side of a semiconductor substrate with respect to the cathode region; a collector region of an IGBT; and a second buffer region adjacent to the back surface side of the collector region. A method of manufacturing the semiconductor device comprises the steps of: forming a thin portion and a thick portion by forming a step portion on a surface of the semiconductor substrate; and forming a first buffer region and a second buffer region by injecting n-type impurities from surfaces of the thin portion and the thick portion. |
