发明名称 オプトエレクトロニクス半導体チップおよびその製造方法
摘要 <p>An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.</p>
申请公布号 JP5715943(B2) 申请公布日期 2015.05.13
申请号 JP20110501097 申请日期 2009.03.13
申请人 发明人
分类号 H01L33/38;H01L33/22;H01L33/40;H01L33/46;H01L33/62 主分类号 H01L33/38
代理机构 代理人
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