| 摘要 |
<p>A trench is etched in a semiconductor wafer by turning a first introduced gas introduced into a reaction chamber into plasma. A protection film is formed on a wall surface of the trench by turning a second introduced gas introduced into the reaction chamber into plasma. The protection film formed on a bottom surface of the trench is removed by turning a third introduced gas introduced into the reaction chamber into plasma. The reaction chamber is evacuated after the protection film formed on the bottom surface of the trench is removed.</p> |
