| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
There is provided a semiconductor device. The semiconductor device includes a plurality of trench transistors in an active region, and an interconnection disposed in an edge region, the interconnection configured to transfer a voltage to the plurality of trench transistors, in which the edge region comprises a substrate, a first insulating layer, a first electrode, a second insulating layer, and a second electrode, disposed in that order. |
| 申请公布号 |
US2015115357(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414254047 |
申请日期 |
2014.04.16 |
| 申请人 |
MagnaChip Semiconductor, Ltd. |
发明人 |
HAN Jin Woo |
| 分类号 |
H01L29/423;H01L27/02;H01L27/088 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a plurality of trench transistors in an active region; and an interconnection disposed in an edge region, wherein the interconnection is configured to transfer a voltage to the plurality of trench transistors; and the edge region comprises a substrate, a first insulating layer, a first electrode, a second insulating layer, and a second electrode, disposed in that order. |
| 地址 |
Cheongju-si KR |
