| 发明名称 |
GROWTH OF CUBIC CRYSTALLINE PHASE STRUCURE ON SILICON SUBSTRATES AND DEVICES COMPRISING THE CUBIC CRYSTALLINE PHASE STRUCTURE |
| 摘要 |
A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught. |
| 申请公布号 |
US2015108427(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201314383833 |
申请日期 |
2013.03.15 |
| 申请人 |
STC. UNM |
发明人 |
Brueck Steven R.J.;Lee Seung-Chang;Wetzel Christian;Detchprohm Theeradetch;Stark Christoph |
| 分类号 |
H01L29/20;H01L21/02;H01L29/15 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate comprising a groove; a buffer layer formed on a surface of the groove, the buffer layer comprising at least one material chosen from AlN, GaN or AlxGa1-xN, where x is between zero and one; an epitaxially grown semiconductor material disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. |
| 地址 |
Albuquerque NM US |
