| 摘要 |
The present invention provides a resist composition comprising a metal compound obtained from reaction of a starting metal compound having formula A-1 or a (partial) hydrolyzate or condensate or (partial) hydrolytic condensate thereof, with a divalent or trihydric alcohol having formula A-2. A-1 is M{OR^(1A)}_4, wherein M is Ti, Zr or Hf, and R1A is alkyl. and A-2 is R^(2A)(OH)_m, wherein m is 2 or 3, R^(2A) is a divalent group when m=2 or a trivalent group when m=3. The resist composition of the present invention exhibits improved resolution and edge roughness. Therefore, the resist composition is an appropriate positive resist composition especially for producing superchip or micro pattern of photo mask, or pattern of the EB or EUV lithography. |
