| 摘要 |
<p>A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber (101) including a heat-shielding portion (110) for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion (110) in chamber (101). Then, by heating material (13) to be sublimated, a material gas is deposited on the other side of heat-shielding portion (110) in chamber (101) so that a Group III nitride semiconductor crystal (15) is grown.</p> |
