发明名称 Switching device with negative bias circuit
摘要 Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a negative bias circuit is configured to generate a negative voltage signal based on a radio frequency (RF) signal applied to the circuit. When the FET is in an off state, the negative voltage signal is provided to a gate terminal of the FET.
申请公布号 US8977217(B1) 申请公布日期 2015.03.10
申请号 US201313772277 申请日期 2013.02.20
申请人 TriQuint Semiconductor, Inc. 发明人 Connick Richard;Ravindran Arjun
分类号 H04B1/44;H01L21/70;H03K17/687;H03K17/16 主分类号 H04B1/44
代理机构 Schwabe Williamson & Wyatt 代理人 Schwabe Williamson & Wyatt
主权项 1. A switching device comprising: a field-effect transistor (FET) including a gate terminal; a negative bias circuit configured to generate a negative voltage signal at an output terminal of the negative bias circuit based on a radio frequency (RF) signal applied to the switching device; and a decoder circuit coupled with the output terminal of the negative bias circuit and the gate terminal, the decoder circuit configured to couple the output terminal of the negative bias circuit with the gate terminal when the FET is in an off state.
地址 Hillsboro OR US