| 摘要 |
<p>The present invention relates to a semiconductor device including a through via and a manufacturing method thereof. Provided is the method for manufacturing the semiconductor device which includes the steps of: forming an integrated circuit on an active surface of a substrate; forming an interlayer dielectric layer which includes a metal wire and covers the integrated circuit; forming a via hole to expose the metal wire by passing through the substrate from an inactive surface which is opposite to the active surface; forming a via insulation layer which extends along the inner wall of the via hole; and forming the through via to fill the via hole. The interlayer dielectric layer includes: a first dielectric layer and a second dielectric layer whose dielectric constant is lower than that of the first dielectric layer. When the via hole is formed, a recess region is formed by etching a part of the second dielectric layer. The via insulation layer fills the recess region.</p> |
