OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAMES

摘要

An oxide semiconductor thin film transistor according to the present invention includes a gate electrode formed on a substrate; a first gate insulating film formed on the gate electrode; a second gate insulating film formed on the first gate insulating film; source and drain electrodes spaced apart from each other on the second gate insulating film by a predetermined interval; and an oxide active layer extending from a top surface of the source electrode to a top surface of the drain electrode via the first and second gate insulating films. The first and second gate insulating films are formed of mutually different materials in a pattern corresponding the source and drain electrodes. Thus, faults of a step clad (step coverage) and GDS (Gate Drain Short) of the insulating film may be improved, and an etching stopper may be omitted to reduce the number of masks so that the process is simplified.