发明名称 PLASMA TREATMENT METHOD
摘要 <p>The present invention provides a plasma treatment method for plasma treatment of a substrate to be treated, such that particles deposited on the surface of the substrate to be treated can be reduced, and charge neutralization time can be decreased. The plasma treatment method utilizes a plasma treatment device which is equipped with a treatment chamber (104) for plasma treatment of a sample (112), a high-frequency power source (109) for supplying high-frequency power for generating plasma, a pulse generation device (118) for generating pulses for time-modulation of the high-frequency power, and a sample stage (111) for mounting the sample, said plasma treatment method being characterized by comprising: a first step wherein a plasma-treatment is applied to the sample using pulse-modulated plasma; a second step wherein a plasma-treatment for desorbing from the sample stage the sample which has been statically adsorbed to the sample stage is applied to the plasma-treated sample using continuous plasma, that is, non-pulse-modulated plasma, after the first step; and a third step wherein the sample which has been desorbed from the sample stage is carried out of the treatment chamber after the second step.</p>
申请公布号 WO2014174650(A1) 申请公布日期 2014.10.30
申请号 WO2013JP62314 申请日期 2013.04.26
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 KANAZAWA SHUNSUKE;YASUI NAOKI;MORIMOTO MICHIKAZU;OHGOSHI YASUO;ARAMAKI TOORU;IKEDA NORIHIKO
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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