| 摘要 |
A semiconductor memory with a U-shaped channel comprises: a U-shaped channel region (401) arranged in a semiconductor substrate (200), a source region (201), a drain region (202), a first layer of insulation film (203) arranged on the U-shaped channel region, a floating gate (205) provided with a notch (204), a second layer of insulation film (206), a control gate (207), a p-n junction diode arranged between the floating gate and the drain region, and a gate controlled diode formed by the control gate, the second layer of insulation film, and the p-n junction diode and using the control gate as a gate. Under the precondition of not increasing the manufacturing cost and difficulty of the semiconductor memory with a U-shaped channel and not affecting the performance of the semiconductor memory with a U-shaped channel, the dimension of a semiconductor storage device is further reduced and the chip density is increased by arranging the notch in the floating gate. |
