SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked film is removed, with a region provided with the mask layer remaining, and a reaction product is formed on a side surface of the remaining stacked film; the reaction product is removed by wet etching treatment after removal of the mask layer; a source electrode and a drain electrode are formed over the stacked film; and a third oxide semiconductor layer, a gate insulating film, and a gate electrode are stacked and formed in this order over the stacked film, and the source electrode and the drain electrode.

主权项

1. A method for manufacturing a semiconductor device, the method comprising the steps of:
forming a stacked film comprising a first oxide semiconductor layer and a second oxide semiconductor layer over a substrate; forming a mask layer over the stacked film; performing a first dry etching treatment to remove a part of the stacked film by etching the stacked film using the mask layer, thereby forming a reaction product on a side surface of the stacked film; removing the mask layer; performing an wet etching treatment to remove the reaction product after removing the mask layer; forming a source electrode and a drain electrode over the stacked film; and forming a third oxide semiconductor layer, a gate insulating film and a gate electrode over the stacked film, the source electrode and the drain electrode, wherein the gate insulating film is over the third oxide semiconductor layer, and wherein the gate electrode is over the gate insulating film.