| 摘要 |
Self-referenced magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21); a storage layer (23) having a storage magnetization (230); a tunnel barrier layer (22) comprised between the sense and the storage layers (21, 23); and an antiferromagnetic layer (24) exchange-coupling the storage layer (23) such that the storage magnetization (230) can be pinned when the antiferromagnetic layer (24) is below a critical temperature and freely varied when the antiferromagnetic layer (24) is heated at or above the critical temperature; said sense layer (21) comprising a first sense layer (211) having a first sense magnetization (213), a second sense layer (212) having a second sense magnetization (214) and spacer layer (215) between the first and second sense layers (211, 212). The MRAM cell can be read with low power consumption. |
