| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level. |
| 申请公布号 |
US2014231905(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201114233835 |
申请日期 |
2011.07.22 |
| 申请人 |
Jeong Yong Hun;Bong Bui Ngo;Tay Yen Thing;Manso Iliyana |
发明人 |
Jeong Yong Hun;Bong Bui Ngo;Tay Yen Thing;Manso Iliyana |
| 分类号 |
H01L29/423;H01L29/78 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A trench MOSFET comprising:
an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; wherein the first and second interfaces are substantially aligned or are at substantially the same level. |
| 地址 |
Kuching MY |
