HIGH-RELIABILITY NON-VOLATILE MEMORY AND PREPARATION METHOD THEREFOR

摘要

The present invention relates to a high-reliability non-volatile resistive random access memory and a preparation method therefor. The memory comprises a top electrode, a bottom electrode, and a resistance change material located between the top electrode and the bottom electrode, wherein the top electrode is located at the top of a device; the bottom electrode is located on a substrate; a metal is doped in a metallic oxide of the resistance change material; and a metallic oxygen storage layer is additionally added between the top electrode and the resistance change material. According to the preparation method for the high-reliability non-volatile memory, by using a doping and double-layer combination method, a resistive random access memory with high reliability and high consistency can be prepared, thereby preferably improving the performance of the resistive random access memory.