发明名称 EMBEDDED ELECTRONIC DEVICE PACKAGE STRUCTURE
摘要 An embedded electronic device package structure includes a core layer, an electronic device, a first dielectric layer, a second dielectric layer and conductive vias. The core layer has cavity, a first surface and a second surface opposite to the first surface. The electronic device is disposed in the cavity. The first dielectric layer disposed on the first surface is filled in part of the cavity and covers one side of the electronic device. The second dielectric layer disposed on the second surface is filled in the cavity, covers another side of the electronic device and connects the first dielectric layer. The first and the second dielectric layers fully cover the electronic device. The conductive vias are disposed around the surrounding of the electronic device and penetrates through the first and the second dielectric layer and the core layer. The conductive vias respectively connects the first and the second dielectric layer.
申请公布号 US2014225272(A1) 申请公布日期 2014.08.14
申请号 US201313762385 申请日期 2013.02.08
申请人 UNIMICRON TECHNOLOGY CORP. 发明人 Chuo Yu-Chen;Cheng Wei-Ming
分类号 H01L23/552 主分类号 H01L23/552
代理机构 代理人
主权项 1. An embedded electronic device package structure, comprising: a core layer, having a cavity, a first surface and a second surface opposite to the first surface; an electronic device, disposed in the cavity of the core layer; a first dielectric layer, disposed on the first surface of the core layer, and filled in the cavity of the core layer, the first dielectric layer covering one side of the electronic device, wherein the first dielectric layer is filled in part of the cavity; a second dielectric layer, disposed on the second surface of the core layer, and filled in the cavity of the core layer, the second dielectric layer covering another side of the electronic device, wherein the first dielectric layer and the second dielectric layer fully cover the electronic device; and a plurality of conductive vias, disposed around the surrounding of the electronic device and penetrating through the first dielectric layer, the second dielectric layer and the core layer, the conductive vias respectively connecting the first dielectric layer and the second dielectric layer.
地址 Taoyuan TW