SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an IGBT capable of reducing a loss generated in a tail current caused by a residual carrier at turn-off.SOLUTION: A p- type semiconductor region (1) and a p+ type semiconductor region (2) are provided at a collector side. A lower electrode (14) in ohmic contact with the p+ type semiconductor region (2) and forming Schottky junction together with the p- type semiconductor region (1) is provided. Thereby, a structure in which an IGBT and a Schottky diode are integrated is provided. A residual carrier at turn-off is discharged via the Schottky diode to reduce a loss generated in a tail current.