| 摘要 |
This semiconductor device is characterized in being provided with: a first substrate (1) on which a power semiconductor element (2) is mounted; a heat-dissipating plate (12); an insulating layer (11) disposed between the first substrate (1) and the heat-dissipating plate (12); and a sealing resin (4) for sealing the first substrate (1), the heat-dissipating plate (12), and the insulating layer (11). In the heat-dissipating plate (12), a first surface on the opposite side from the insulating layer (12) is exposed through the sealing resin (4), and the insulating layer (11) has a curved area (11a) that curves toward the first surface, the end sections of the curved area (11a) being inside the sealing resin (4). |
