SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

In one embodiment, a semiconductor device includes a first diffusion layer of a first conductive type and a second diffusion layer of a second conductive type which is a reverse conductive type of the first conductive type, the first conductive type first diffusion layer and the second conductive type diffusion layer being spaced apart and provided in a semiconductor layer, a pocket region of the second conductive type which is provided on a surface portion of the semiconductor layer adjacently to the first diffusion layer, and a first extension region of the first conductive type which is provided in the semiconductor layer to cover at least a portion of the pocket region. A second diffusion layer side end portion of the first extension region is positioned closer to a second diffusion layer side than a second diffusion layer side end portion of the pocket region.

主权项

1. A semiconductor device comprising:
a first diffusion layer of a first conductive type and a second diffusion layer of a second conductive type which is a reverse conductive type of the first conductive type, the first conductive type first diffusion layer and the second conductive type diffusion layer being spaced apart and provided in a semiconductor layer; a gate insulation film which is provided on the semiconductor layer between the first diffusion layer and the second diffusion layer; a gate electrode which is provided on the gate insulation film; a pocket region of the second conductive type which is provided on a surface portion of the semiconductor layer adjacently to the first diffusion layer; and a first extension region of the first conductive type which is provided in the semiconductor layer to cover at least a portion of the pocket region, wherein a second diffusion layer side end portion of the first extension region is positioned closer to a second diffusion layer side than a second diffusion layer side end portion of the pocket region.