| 发明名称 |
Post-Passivation Interconnect Structure and Methods for Forming the Same |
| 摘要 |
A method includes forming a polymer layer over a passivation layer, wherein the passivation layer further comprises a portion over a metal pad. The polymer layer is patterned to form an opening in the polymer layer, wherein exposed surfaces of the polymer layer have a first roughness. A surface treatment is performed to increase a roughness of the polymer layer to a second roughness greater than the first roughness. A metallic feature is formed over the exposed surface of the polymer layer. |
| 申请公布号 |
US2014191392(A1) |
申请公布日期 |
2014.07.10 |
| 申请号 |
US201313737177 |
申请日期 |
2013.01.09 |
| 申请人 |
COMPANY, LTD. TAIWAN SEMICONDUCTOR MANUFACTURING |
发明人 |
Tu Chia-Wei;Kuo Yian-Liang;Hsieh Wei-Lun;Tsai Tsung-Fu |
| 分类号 |
H01L21/768;H01L23/498 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a polymer layer over a passivation layer, wherein the passivation layer further comprises a portion over a metal pad; patterning the polymer layer to form an opening in the polymer layer, wherein exposed surfaces of the polymer layer have a first roughness; performing a surface treatment to increase a roughness of the polymer layer to a second roughness greater than the first roughness; and forming a metallic feature over the exposed surface of the polymer layer. |
| 地址 |
US |
