| 摘要 |
<p>The present invention provides a charged particle beam device capable of automatically setting an appropriate analysis location in response to defects having a variety of shapes. This charged particle beam device is provided with an electron source, condenser lens, deflection means, objective, stage, and defect analysis means. The electron source emits an electron beam. The condenser lens converges the electron beam emitted from the electron source. The deflection means changes the location of the electron beam converged by the condenser lens. The objective focuses the electron beam changed by the deflection means and radiates the resulting beam on a subject to be inspected. The stage is where the subject to be inspected is mounted. The defect analysis means analyzes a defect on the basis of information on elements released from a defect portion in the subject to be inspected by the radiation of the electron beam. The defect analysis means determines an analysis point in a defect region determined as a single defect by the defect analysis means, the analysis point being determined on the basis of the shape of the defect.</p> |
