发明名称 METHOD OF MANUFACTURING ALUMINUM ETCHED PLATE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing an aluminum etched plate capable of properly proceeding AC etching by a depth of 50μm or more even when aluminum is dissolved in an etchant.SOLUTION: In an etching process forming an etching part having a depth 50μm or more per single side by applying AC current to an aluminum plate in an etchant, the amount of aluminum in the etchant c (g/litter) and a peak current density of the AC current i (mA/cm) is set to satisfy all of following conditions, i≤- 12.5×c+412.55 g/litter≤c≤13 g/litter.</p>
申请公布号 JP2014118617(A) 申请公布日期 2014.06.30
申请号 JP20120276176 申请日期 2012.12.18
申请人 NIPPON LIGHT METAL CO LTD 发明人 KATANO MASAHIKO
分类号 C25F3/04;H01G9/04 主分类号 C25F3/04
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