METHOD FOR DECREASING DEFECTS OF SILICON-CARBIDE SEED

摘要

Disclosed is a method for decreasing defects of a silicon-carbide seed. The method for decreasing defects of a silicon-carbide seed according to the present invention comprises the steps of: coating an adhesive material on one side of the silicon carbide seed; baking after filling a silicon carbide material powder in the bottom surface of the crucible and attaching the coated silicon carbide seed to the opposite surface of the powder; and thermal processing which maintains the seed cooled after the baking step at an ascended temperature for a fixed time.