发明名称 ROW HAMMER MONITORING BASED ON STORED ROW HAMMER THRESHOLD VALUE
摘要 Detection logic of a memory subsystem obtains a threshold for a memory device that indicates a number of accesses within a time window that causes risk of data corruption on a physically adjacent row. The detection logic obtains the threshold from a register that stores configuration information for the memory device, and can be a register on the memory device itself and/or can be an entry of a configuration storage device of a memory module to which the memory device belongs. The detection logic determines whether a number of accesses to a row of the memory device exceeds the threshold. In response to detecting the number of accesses exceeds the threshold, the detection logic can generate a trigger to cause the memory device to perform a refresh targeted to a physically adjacent victim row.
申请公布号 US2014156923(A1) 申请公布日期 2014.06.05
申请号 US201213690523 申请日期 2012.11.30
申请人 Intel Corporation 发明人 Bains Kuljit S.;Halbert John B.
分类号 G11C11/406 主分类号 G11C11/406
代理机构 代理人
主权项 1. A memory subsystem comprising: a memory device having multiple physical rows of memory cells; and detection logic coupled to the memory device, the detection logic to obtain an access rate threshold for the memory device from a register that stores configuration information for the memory device, the threshold identifying a number of accesses to a specific row of memory within a time window that causes risk of data corruption on a row physically adjacent to the accessed row;determine based on the threshold whether a number of accesses to one of the multiple physical rows of the memory device exceeds the threshold; andin response to detecting that the number of accesses exceeds the threshold, trigger the memory device to perform a refresh targeted to a victim row physically adjacent to the row for which the number of accesses exceeded the threshold.
地址 Santa Clara CA US