| 发明名称 |
A SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING |
| 摘要 |
<p>A method for forming a substrate includes forming a base layer comprising a Group III-V material on a substrate, cooling the base layer and inducing cracks in the base layer, and forming a bulk layer comprising a Group III-V material on the base layer after cooling.</p> |
| 申请公布号 |
KR20140056224(A) |
申请公布日期 |
2014.05.09 |
| 申请号 |
KR20147001910 |
申请日期 |
2012.06.27 |
| 申请人 |
SAINT-GOBAIN CRISTAUX ET DETECTEURS |
发明人 |
BEAUMONT BERNARD;FAURIE JEAN PIERRE |
| 分类号 |
H01L21/20;H01L33/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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