发明名称 |
COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a fine resist pattern, from which a pattern having high dry etching durability can be formed, and to provide a pattern forming method which reduces pipe clogging in a production process using the composition.SOLUTION: The composition for forming a fine pattern is used for minimizing a pattern by thickening a resist pattern in a process of forming a negative resist pattern using a chemically amplified resist composition; and the composition for forming a fine pattern comprises a polymer including a repeating unit having a hydroxyaryl group and an organic solvent that does not dissolve the negative resist pattern. The pattern forming method is carried out by using the composition for forming a fine pattern. In the pattern forming method, pipe clogging can be prevented by carrying out application of a resist composition and application of the composition for forming a fine pattern in the same coating apparatus. |
申请公布号 |
JP2014071424(A) |
申请公布日期 |
2014.04.21 |
申请号 |
JP20120219657 |
申请日期 |
2012.10.01 |
申请人 |
AZ ELECTRONIC MATERIALS MFG CO LTD |
发明人 |
YAMAMOTO KAZUMA;ISHII MASAHIRO;SEKITO TAKASHI;YANAGIDA HIROSHI;NAKASUGI SHIGEMASA;NOYA TAKESHI |
分类号 |
G03F7/40;C08F12/22;C08F20/10;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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