发明名称 COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a composition for forming a fine resist pattern, from which a pattern having high dry etching durability can be formed, and to provide a pattern forming method which reduces pipe clogging in a production process using the composition.SOLUTION: The composition for forming a fine pattern is used for minimizing a pattern by thickening a resist pattern in a process of forming a negative resist pattern using a chemically amplified resist composition; and the composition for forming a fine pattern comprises a polymer including a repeating unit having a hydroxyaryl group and an organic solvent that does not dissolve the negative resist pattern. The pattern forming method is carried out by using the composition for forming a fine pattern. In the pattern forming method, pipe clogging can be prevented by carrying out application of a resist composition and application of the composition for forming a fine pattern in the same coating apparatus.
申请公布号 JP2014071424(A) 申请公布日期 2014.04.21
申请号 JP20120219657 申请日期 2012.10.01
申请人 AZ ELECTRONIC MATERIALS MFG CO LTD 发明人 YAMAMOTO KAZUMA;ISHII MASAHIRO;SEKITO TAKASHI;YANAGIDA HIROSHI;NAKASUGI SHIGEMASA;NOYA TAKESHI
分类号 G03F7/40;C08F12/22;C08F20/10;H01L21/027 主分类号 G03F7/40
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