发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that is capable of retaining a storage content even under a state of no power supply during a storage retention period and has a novel configuration with no restraint on writing frequency.SOLUTION: The semiconductor device includes: a first transistor that has a first channel formation region with any other semiconductor material than oxide semiconductor; a second transistor that is above the first transistor and has a second channel formation region using oxide semiconductor material; and a capacitative element. Either of a second source electrode or a second drain electrode of the second transistor is electrically connected with one electrode of the capacitative element.
申请公布号 JP2014068050(A) 申请公布日期 2014.04.17
申请号 JP20140011543 申请日期 2014.01.24
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN;KATO KIYOSHI
分类号 H01L21/8242;H01L21/8244;H01L27/10;H01L27/108;H01L27/11;H01L29/786 主分类号 H01L21/8242
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