发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is capable of retaining a storage content even under a state of no power supply during a storage retention period and has a novel configuration with no restraint on writing frequency.SOLUTION: The semiconductor device includes: a first transistor that has a first channel formation region with any other semiconductor material than oxide semiconductor; a second transistor that is above the first transistor and has a second channel formation region using oxide semiconductor material; and a capacitative element. Either of a second source electrode or a second drain electrode of the second transistor is electrically connected with one electrode of the capacitative element. |
申请公布号 |
JP2014068050(A) |
申请公布日期 |
2014.04.17 |
申请号 |
JP20140011543 |
申请日期 |
2014.01.24 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;KATO KIYOSHI |
分类号 |
H01L21/8242;H01L21/8244;H01L27/10;H01L27/108;H01L27/11;H01L29/786 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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