发明名称 Substrate for mounting semiconductor, semiconductor device and method for manufacturing semiconductor device
摘要 A substrate for mounting a semiconductor includes a first insulation layer having first and second surfaces on the opposite sides and having a penetrating hole penetrating through the first insulation layer, an electrode formed in the penetrating hole in the first insulation layer and having a protruding portion protruding from the second surface of the first insulation layer, a first conductive pattern formed on the first surface of the first insulation layer and connected to the electrode, a second insulation layer formed on the first surface of the first insulation layer and the first conductive pattern and having a penetrating hole penetrating through the second insulating layer, a second conductive pattern formed on the second insulation layer and for mounting a semiconductor element, and a via conductor formed in the penetrating hole in the second insulation layer and connecting the first and second conductive patterns.
申请公布号 US8698303(B2) 申请公布日期 2014.04.15
申请号 US201113249838 申请日期 2011.09.30
申请人 FURUTANI TOSHIKI;KOMATSU DAIKI;KUNIEDA MASATOSHI;FUJITA NAOMI;TAKAHASHI NOBUYA;IBIDEN CO., LTD. 发明人 FURUTANI TOSHIKI;KOMATSU DAIKI;KUNIEDA MASATOSHI;FUJITA NAOMI;TAKAHASHI NOBUYA
分类号 H01L23/12 主分类号 H01L23/12
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