发明名称 |
Substrate for mounting semiconductor, semiconductor device and method for manufacturing semiconductor device |
摘要 |
A substrate for mounting a semiconductor includes a first insulation layer having first and second surfaces on the opposite sides and having a penetrating hole penetrating through the first insulation layer, an electrode formed in the penetrating hole in the first insulation layer and having a protruding portion protruding from the second surface of the first insulation layer, a first conductive pattern formed on the first surface of the first insulation layer and connected to the electrode, a second insulation layer formed on the first surface of the first insulation layer and the first conductive pattern and having a penetrating hole penetrating through the second insulating layer, a second conductive pattern formed on the second insulation layer and for mounting a semiconductor element, and a via conductor formed in the penetrating hole in the second insulation layer and connecting the first and second conductive patterns. |
申请公布号 |
US8698303(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201113249838 |
申请日期 |
2011.09.30 |
申请人 |
FURUTANI TOSHIKI;KOMATSU DAIKI;KUNIEDA MASATOSHI;FUJITA NAOMI;TAKAHASHI NOBUYA;IBIDEN CO., LTD. |
发明人 |
FURUTANI TOSHIKI;KOMATSU DAIKI;KUNIEDA MASATOSHI;FUJITA NAOMI;TAKAHASHI NOBUYA |
分类号 |
H01L23/12 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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