| 摘要 |
An object of the present invention is to provide a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound has, as a unit structure, a transition metal-containing silicon cluster in which an energy gap E HL between highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) is wide. The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom. |
