发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>A semiconductor device includes a substrate having active regions, a conductive pattern which is formed on the active regions and has a first sidewall and a second sidewall, a first conducive line which faces the first sidewall with a first air spacer therebetween on the active regions, and a second conductive line which faces the second sidewall with a second air spacer therebetween on the active regions. The first air spacer and the second air spacer around the conductive pattern are asymmetrical.</p>
申请公布号 KR20140036447(A) 申请公布日期 2014.03.26
申请号 KR20120102269 申请日期 2012.09.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SON, NAK JIN
分类号 H01L27/108;H01L21/28;H01L21/8242 主分类号 H01L27/108
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