发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A semiconductor device includes a substrate having active regions, a conductive pattern which is formed on the active regions and has a first sidewall and a second sidewall, a first conducive line which faces the first sidewall with a first air spacer therebetween on the active regions, and a second conductive line which faces the second sidewall with a second air spacer therebetween on the active regions. The first air spacer and the second air spacer around the conductive pattern are asymmetrical.</p> |
申请公布号 |
KR20140036447(A) |
申请公布日期 |
2014.03.26 |
申请号 |
KR20120102269 |
申请日期 |
2012.09.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON, NAK JIN |
分类号 |
H01L27/108;H01L21/28;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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