| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a stable protected operation is unlikely to be performed because bias resistance changes due to an influence of profiles of a well and a substrate.SOLUTION: A semiconductor device comprises: a second conductivity type first well arranged on a first conductivity type first semiconductor layer; a second conductivity type second well which is arranged under the first semiconductor layer and has a part projecting from a region around the first semiconductor layer to the first well side; a second semiconductor layer which is arranged between the first well and the second well so as to surround the first well and has a bottom which contacts the first semiconductor layer, and a divided part; a second conductivity type well connection part arranged at the divided part for connecting the first well and the second well; gate electrodes on the first well; second conductivity type first diffusion layer and second diffusion layer which are formed in the first well on both sides of each of the gate electrodes; a first connection node electrically connected with the second semiconductor layer and the second diffusion layer; and a second connection node electrically connected with the first diffusion layer and the second well. |
