| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching apparatus for etching the surface of a semiconductor substrate capable of mass production using a gas exothermically reacting with the semiconductor substrate as an etching gas.SOLUTION: The surface etching apparatus of a semiconductor substrate includes: a load lock chamber; an etching chamber capable of reducing the pressure lower than the atmospheric pressure; an unload lock chamber; and a conveyance mechanism that conveys a tray loaded with the semiconductor substrate from the load lock chamber to the unload lock chamber through the etching chamber. The load lock chamber, the etching chamber and the unload lock chamber are disposed in one direction. The etching chamber has plural first openings through which etching gas is ejected onto the surface of the semiconductor substrate without being changed into active ions due to plasma and plural second openings through which cooling gas is ejected onto the surface of the semiconductor substrate. The first opening and the second opening are repeatedly disposed along the conveyance direction. |
