| 摘要 |
A poly-silicon thin film transistor (TFT), a poly-silicon array substrate, methods for manufacturing same, and a display device, so as to solve the problems of a large number of masks, a complex process, and too high cost in a manufacturing process in the prior art. The poly-silicon TFT comprises a doped region (201). The method for manufacturing a poly-silicon TFT comprises the following steps: forming a poly-silicon layer on a substrate (1), and forming a source layer (2) by adopting a patterning process; forming a first insulating layer (3); forming a via (6) exposing an active layer (2) by adopting a patterning process, a source electrode (7) and a drain electrode (8) being connected to the active layer (2) through the via (6); doping the active layer (2) by adopting a doping process through the via (6) to form the doped region (201); and forming source and drain metal layers, and forming the source electrode (7) and the drain electrode (8) by adopting the patterning process. |
