发明名称 |
SYSTEM AND METHOD FOR GAS-PHASE SULFUR PASSIVATION OF A SEMICONDUCTOR SURFACE |
摘要 |
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface. |
申请公布号 |
US2014027884(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201313941216 |
申请日期 |
2013.07.12 |
申请人 |
ASM IP HOLDING B.V. |
发明人 |
TANG FU;GIVENS MICHAEL EUGENE;XIE QI;RAISANEN PETRI |
分类号 |
H01L21/02;H01L21/67;H01L23/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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