发明名称 SYSTEM AND METHOD FOR GAS-PHASE SULFUR PASSIVATION OF A SEMICONDUCTOR SURFACE
摘要 Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.
申请公布号 US2014027884(A1) 申请公布日期 2014.01.30
申请号 US201313941216 申请日期 2013.07.12
申请人 ASM IP HOLDING B.V. 发明人 TANG FU;GIVENS MICHAEL EUGENE;XIE QI;RAISANEN PETRI
分类号 H01L21/02;H01L21/67;H01L23/02 主分类号 H01L21/02
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