| 摘要 |
<p>A method for producing a nitride crystal, which comprises a step of growing a nitride crystal on the surface of a seed crystal put in a reactor while the temperature and the pressure inside the reactor that contains, as put thereinto, a seed crystal having a hexagonal-system crystal structure, a nitrogen-containing solvent, a starting material, and a mineralizing agent containing fluorine and at least one halogen element selected from chlorine, bromine and iodine are so controlled that the solvent therein can be in a supercritical state and/or a subcritical state to thereby grow a nitride crystal on the surface of the seed crystal in the reactor.</p> |
