发明名称 SEMICONDUCTOR SOCKET WITH DIRECT SELECTIVE METALIZATION
摘要 A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A conductive structure is disposed within the through holes A plurality of discrete contact members are located in the plurality of the through holes, within the conductive structure. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. The conductive structure can be electrically coupled to circuit geometry. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to desired circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.
申请公布号 WO2014011232(A1) 申请公布日期 2014.01.16
申请号 WO2013US31395 申请日期 2013.03.14
申请人 HSIO TECHNOLOGIES, LLC 发明人 RATHBURN, JAMES
分类号 H01L23/48;H01L23/552 主分类号 H01L23/48
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