| 摘要 |
A solid-state imaging element and a method for producing the same are provided to reduce defects on pixels by terminating a dangling bond with a hydrogen supply process. A light receiving part for generating charges by light irradiation and source/drain regions(14,24) of a transistor are formed in a semiconductor layer. A non-silicide region includes the light receiving part. The source/drain region and a gate electrode of the transistor are the non-silicide region. The surfaces of the source/drain region and the gate electrode of the transistor are the silicide region. The non-silicide region includes a sidewall(32) formed on a side surface of the gate electrode of the transistor, a hydrogen supply layer formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block layer(34) formed on the hydrogen supply layer to prevent silicidation. A sidewall is formed on the lateral surface of the gate electrode of the transistor in the silicide region. The hydrogen supply layer and the salicide block layer are formed in the silicide region.
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