发明名称 SILICON CARBIDE SEMICONDUCTOR DEVICE
摘要 A collector layer is made of silicon carbide having a first conductivity type. A switching element is provided on the collector layer. The switching element includes a junction gate for controlling a channel having a second conductivity type different from the first conductivity type.
申请公布号 US2013341645(A1) 申请公布日期 2013.12.26
申请号 US201313895036 申请日期 2013.05.15
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HAYASHI HIDEKI
分类号 H01L29/16;H01L29/739 主分类号 H01L29/16
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