发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A collector layer is made of silicon carbide having a first conductivity type. A switching element is provided on the collector layer. The switching element includes a junction gate for controlling a channel having a second conductivity type different from the first conductivity type. |
申请公布号 |
US2013341645(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201313895036 |
申请日期 |
2013.05.15 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HAYASHI HIDEKI |
分类号 |
H01L29/16;H01L29/739 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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