发明名称 WAFER SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a wafer substrate and a method of manufacturing the same capable of providing a wafer mirror finished on one side with excellent flatness with little surface droop with excellent reproducibility, without causing troubles in handleability or the like in grinding and in a post-step after grinding, and without the need of complicated steps, in a method of roughly grinding both surfaces of the wafer substrate simultaneously.SOLUTION: A method of manufacturing a wafer substrate includes a double-sided grinding step of installing a wafer substrate 70 to be processed between a pair of surface plates 10 and 20 provided top and bottom, rotating the pair of surface plates respectively while supplying slurry in which abrasive grains are dispersed between the pair of surface plates, and simultaneously grinding both surfaces of the wafer substrate to be processed. In the double-sided grinding step, surface materials of parts to be in contact with the wafer substrate to be processed of one surface plate and the other surface plate of the pair of surface plates are turned to different materials, and the wafer for which surface roughness is different on the front and back is obtained by one grinding.
申请公布号 JP2013220516(A) 申请公布日期 2013.10.28
申请号 JP20120095155 申请日期 2012.04.18
申请人 SUMITOMO METAL MINING CO LTD 发明人 KITAGAWA TAIZO
分类号 B24B37/08;B24B37/14;B24B37/20;B24B37/24;H01L41/09;H01L41/18;H01L41/22;H01L41/39 主分类号 B24B37/08
代理机构 代理人
主权项
地址