发明名称 |
Group 13 nitride crystal and group 13 nitride crystal substrate |
摘要 |
A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane. |
申请公布号 |
EP2642000(A2) |
申请公布日期 |
2013.09.25 |
申请号 |
EP20130159771 |
申请日期 |
2013.03.18 |
申请人 |
RICOH COMPANY, LIMITED |
发明人 |
HAYASHI, MASAHIRO;SARAYAMA, SEIJI;SATOH, TAKASHI;KIMURA, CHIHARU;MIYOSHI, NAOYA;MURAKAMI, AKISHIGE;WADA, JUNICHI |
分类号 |
C30B9/06;C30B29/40 |
主分类号 |
C30B9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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