发明名称 Group 13 nitride crystal and group 13 nitride crystal substrate
摘要 A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane.
申请公布号 EP2642000(A2) 申请公布日期 2013.09.25
申请号 EP20130159771 申请日期 2013.03.18
申请人 RICOH COMPANY, LIMITED 发明人 HAYASHI, MASAHIRO;SARAYAMA, SEIJI;SATOH, TAKASHI;KIMURA, CHIHARU;MIYOSHI, NAOYA;MURAKAMI, AKISHIGE;WADA, JUNICHI
分类号 C30B9/06;C30B29/40 主分类号 C30B9/06
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