发明名称 |
Magnetic memory including a magnetoresistive element |
摘要 |
A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2. |
申请公布号 |
US8530987(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US201213432486 |
申请日期 |
2012.03.28 |
申请人 |
AIKAWA HISANORI;KAI TADASHI;NAKAYAMA MASAHIKO;IKEGAWA SUMIO;SHIMOMURA NAOHARU;KITAGAWA EIJI;KISHI TATSUYA;OZEKI JYUNICHI;YODA HIROAKI;YANAGI SATOSHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
AIKAWA HISANORI;KAI TADASHI;NAKAYAMA MASAHIKO;IKEGAWA SUMIO;SHIMOMURA NAOHARU;KITAGAWA EIJI;KISHI TATSUYA;OZEKI JYUNICHI;YODA HIROAKI;YANAGI SATOSHI |
分类号 |
H01L29/82;G11C11/02 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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