发明名称 CMOS active image sensor with common pixel transistors and binning capability
摘要 A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that use a common output transistor. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of an output transistor.
申请公布号 USRE44482(E1) 申请公布日期 2013.09.10
申请号 US201213343843 申请日期 2012.01.05
申请人 BEREZIN VLADIMIR;KRYMSKI ALEXANDER I.;FOSSUM ERIC R.;ROUND ROCK RESEARCH, LLC 发明人 BEREZIN VLADIMIR;KRYMSKI ALEXANDER I.;FOSSUM ERIC R.
分类号 H01L31/062;G01S7/487;H01L27/146;H01L27/148;H01L31/101;H01L31/113 主分类号 H01L31/062
代理机构 代理人
主权项
地址