NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND NITRIDE FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor epitaxial wafer and a nitride field effect transistor, which can inhibit current collapse.SOLUTION: A nitride semiconductor epitaxial wafer 200 comprises: an SiC substrate 101; a GaN layer 103 formed on the SiC substrate 101; and an AlGaN layer 104 formed on the GaN layer 103. The GaN layer 103 has a Wurtzite crystal structure. A ratio c/a between a grating constant c of the GaN layer 103 in a c-axis direction and a grating constant a of the GaN layer 103 in an a-axis direction is 1.6266 and under.