SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to reduce processing time by reducing the thickness of a semiconductor layer with implanted ions. CONSTITUTION: A first light emitting part (503) and a second light emitting part (505) are formed on a substrate (510). The first light emitting part and the second light emitting part include an n-type nitride semiconductor layer (530), an active layer (540), and a p-type nitride semiconductor layer (550) respectively. A connection electrode (590) electrically connects the n-type nitride semiconductor layer of the first light emitting part to the p-type nitride semiconductor layer of the second light emitting part. A current blocking layer (507) is formed between the first light emitting part and the second light emitting part. An insulator (585) is formed on the lateral surface of the second light emitting part facing the first light emitting part.