发明名称 |
THROUGH SUBSTRATE VIA STRUCTURE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A through substrate via (TSV) structure is provided, including: a substrate; an opening formed in a portion of the semiconductor substrate; a dielectric layer formed on the sidewall of the opening; a conductive pillar formed inside the opening; and at least a portion of the dielectric layer is removed to form void. Also provided is a method for fabricating a through substrate via (TSV) structure. |
申请公布号 |
US2013161825(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201113341846 |
申请日期 |
2011.12.30 |
申请人 |
HSU TZU-CHIEN;KU TZU-KUN;LIN CHA-HSIN;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
HSU TZU-CHIEN;KU TZU-KUN;LIN CHA-HSIN |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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